Planar Fet

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High Voltage Planar Mosfet 7n65a/7n65af 650v 7a To-220/220f N Channel Enhancement Mode Field Effect Transistor, Find Complete Details about High Voltage Planar Mosfet 7n65a/7n65af 650v 7a To-220.

  • The planar part has a 51-mm 2 die area and is rated at 150 V. The trench part has a 47.6-mm 2 die area and is rated at 110 V. The R ds-on for planar device is approximately three times the R ds-on of the trench part. 1 shows photographs of the test parts with their die exposed. The tests were tailored for a specific application.
  • Owing to the presence of multiple gates, FinFETs are able to tackle short-channel effects (SCEs) better than conventional planar MOSFETs at deeply scaled technology and thus enable continued transistor scaling.

The Germanium Planar FET-A New Device for Radio Applications

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DA. N.. Leonard, ST. T.. Ou, and JA. H.. Abernathy, 'The Germanium Planar FET-A New Device for Radio Applications,' J. Audio Eng. Soc., vol. 15, no. 2, pp. 183-189, (1967 April.). doi: DA. N.. Leonard, ST. T.. Ou, and JA. H.. Abernathy, 'The Germanium Planar FET-A New Device for Radio Applications,' J. Audio Eng. Soc., vol. 15 Issue 2 pp. 183-189, (1967 April.). doi:
Abstract: Recently developed germanium planar junction field-effect transistors are described, with emphasis on VHF characteristics. Broadcast-band FM tuner design is discussed with respect to gain, stability, spurious response rejection, large signal handling capability, noise performance, and AGC characteristics. Practical circuits are presented.

Fet

@article{leonard1967the,
author={leonard, david n. and ou, steve t. and abernathy, jack h.},
journal={journal of the audio engineering society},
title={the germanium planar fet-a new device for radio applications},
year={1967},
volume={15},
number={2},
pages={183-189},
doi={},
month={april},} @article{leonard1967the,
author={leonard, david n. and ou, steve t. and abernathy, jack h.},
journal={journal of the audio engineering society},
title={the germanium planar fet-a new device for radio applications},
year={1967},
volume={15},
number={2},
pages={183-189},
doi={},
month={april},
abstract={recently developed germanium planar junction field-effect transistors are described, with emphasis on vhf characteristics. broadcast-band fm tuner design is discussed with respect to gain, stability, spurious response rejection, large signal handling capability, noise performance, and agc characteristics. practical circuits are presented.},}

TY - paper
TI - The Germanium Planar FET-A New Device for Radio Applications
SP - 183 EP - 189
AU - Leonard, David N.
AU - Ou, Steve T.
AU - Abernathy, Jack H.
PY - 1967
JO - Journal of the Audio Engineering Society
IS - 2
VO - 15
VL - 15
Y1 - April 1967 TY - paper
TI - The Germanium Planar FET-A New Device for Radio Applications
SP - 183 EP - 189
AU - Leonard, David N.
AU - Ou, Steve T.
AU - Abernathy, Jack H.
PY - 1967
JO - Journal of the Audio Engineering Society
IS - 2
VO - 15
VL - 15
Y1 - April 1967
AB - Recently developed germanium planar junction field-effect transistors are described, with emphasis on VHF characteristics. Broadcast-band FM tuner design is discussed with respect to gain, stability, spurious response rejection, large signal handling capability, noise performance, and AGC characteristics. Practical circuits are presented.

Recently developed germanium planar junction field-effect transistors are described, with emphasis on VHF characteristics. Broadcast-band FM tuner design is discussed with respect to gain, stability, spurious response rejection, large signal handling capability, noise performance, and AGC characteristics. Practical circuits are presented.


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Planar Fet Vs Finfet